advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 75v lower on-resistance r ds(on) 5m fast switching characteristic i d 80a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ e as mj t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 0.5 /w rthj-a 40 /w data and specifications subject to change without notice thermal data parameter storage temperature range operating junction temperature range linear derating factor 2 single pulse avalanche energy 4 continuous drain current, v gs @ 10v 70 pulsed drain current 1 320 total power dissipation 300 gate-source voltage + 20 continuous drain current, v gs @ 10v 3 80 parameter rating drain-source voltage 75 AP95T07GS 450 -55 to 175 -55 to 175 rohs-compliant product 200901122 1 maximum thermal resistance, junction-ambient (pcb mount) 5 g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g d s to-263(s)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 75 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =60a - - 5 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =60a - 88 - s i dss drain-source leakage current v ds =75v, v gs =0v - - 10 ua drain-source leakage current (t j =125 o c) v ds =60v ,v gs =0v - - 250 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =80a - 85 135 nc q gs gate-source charge v ds =40v - 25 - nc q gd gate-drain ("miller") charge v gs =10v - 36 - nc t d(on) turn-on delay time 2 v ds =40v - 22 - ns t r rise time i d =80a - 160 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 38 - ns t f fall time r d =0.5 - 165 - ns c iss input capacitance v gs =0v - 4290 6870 pf c oss output capacitance v ds =25v - 985 - pf c rss reverse transfer capacitance f=1.0mhz - 390 - pf r g gate resistance f=1.0mhz - 1.2 1.8 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =60a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =40a, v gs =0v - 75 - ns q rr reverse recovery charge di/dt=100a/s - 190 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.package limitation current is 80a, calculated continuous current based on maximum allowable junction temperature is 169a. 4.starting t j =25 o c , l=1mh , i as =30a. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. AP95T07GS 2 5.surface mounted on 1 in 2 copper pad of fr4 board
AP95T07GS fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 50 100 150 200 250 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10 v 9.0 v 8.0 v 7.0 v v g = 6.0 v 0 20 40 60 80 100 120 0123 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 9.0v 8.0v 7.0v v g = 6.0 v t c =175 o c 4 6 8 10 12 45678910 v gs gate-to-source voltage (v) r ds(on) (m ) i d =30a t c =25 o c 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized r ds(on) i d =60a v g =10v 0 10 20 30 40 50 60 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =175 o c 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 200 t j ,junction temperature ( o c) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP95T07GS 0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =40v v ds =48v v ds =64v i d =80a t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 100 1000 10000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 100us 1ms 10ms 100ms dc
package outline : to-263 millimeters min nom max a 4.25 4.75 5.20 a1 0.00 0.15 0.30 a2 2.20 2.45 2.70 b 0.70 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.45 0.60 c1 1.15 1.30 1.45 d 8.30 8.90 9.40 d1 d2 e 9.70 10.10 10.50 e1 e2 e3 e 2.04 2.54 3.04 l1 l2 l3 4.50 4.90 5.30 l4 0 ----- 5 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-263 advanced power electronics corp. symbols 5.10(ref) 1.27(ref) 7.40(ref) 6.40(ref) 8.00(ref) 2.54(ref) 1.50 1.50 part number b b1 e l2 l3 c1 a a1 l4 c ywwsss logo a2 date code (ywwsss) y last digit of the year ww week sss sequence package code 95t07gs e d l3 c1 a a1 c d1 e1 meet rohs requirement for low voltage mosfet only e2 e3 l1 d2 5
|
